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Электронный компонент: DTC123EET1

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Semiconductor Components Industries, LLC, 2005
January, 2005 - Rev. 6
1
Publication Order Number:
DTC114EET1/D
DTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC-75/SOT-416 package which is designed for low power surface
mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-75/SOT-416 Package Can be Soldered Using Wave or
Reflow
The Modified Gull-Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Pb-Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation,
FR-4 Board (Note 1) @ T
A
= 25
C
Derate above 25
C
P
D
200
1.6
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
600
C/W
Total Device Dissipation,
FR-4 Board (Note 2) @ T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance,
Junction-to-Ambient (Note 2)
R
q
JA
400
C/W
Junction and Storage Temperature Range
T
J
, T
stg
-55 to
+150
C
1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0
1.0 Inch Pad
NPN SILICON
BIAS RESISTOR TRANSISTORS
SC-75/SOT-416
CASE 463
STYLE 1
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
xx = Specific Device Code
M = Date Code
MARKING
DIAGRAM
xx M
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DTC114EET1 Series
http://onsemi.com
2
ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
DTC114EET1
8A
10
10
SC-75/SOT-416
DTC114EET1G
8A
10
10
SC-75/SOT-416
(Pb-Free)
DTC124EET1
8B
22
22
SC-75/SOT-416
DTC124EET1G
8B
22
22
SC-75/SOT-416
(Pb-Free)
DTC144EET1
8C
47
47
SC-75/SOT-416
DTC144EET1G
8C
47
47
SC-75/SOT-416
(Pb-Free)
DTC114YET1
8D
10
47
SC-75/SOT-416
DTC114YET1G
8D
10
47
SC-75/SOT-416
(Pb-Free)
DTC114TET1
94
10
SC-75/SOT-416
DTC114TET1G
94
10
SC-75/SOT-416
(Pb-Free)
DTC143TET1
8F
4.7
SC-75/SOT-416
DTC143TET1G
8F
4.7
SC-75/SOT-416
(Pb-Free)
DTC123EET1
8H
2.2
2.2
SC-75/SOT-416
3000 Tape & Reel
DTC123EET1G
8H
2.2
2.2
SC-75/SOT-416
(Pb-Free)
DTC143EET1
8J
4.7
4.7
SC-75/SOT-416
DTC143EET1G
8J
4.7
4.7
SC-75/SOT-416
(Pb-Free)
DTC143ZET1
8K
4.7
47
SC-75/SOT-416
DTC143ZET1G
8K
4.7
47
SC-75/SOT-416
(Pb-Free)
DTC124XET1
8L
22
47
SC-75/SOT-416
DTC124XET1G
8L
22
47
SC-75/SOT-416
(Pb-Free)
DTC123JET1
8M
2.2
47
SC-75/SOT-416
DTC123JET1G
8M
2.2
47
SC-75/SOT-416
(Pb-Free)
DTC115EET1
8N
100
100
SC-75/SOT-416
DTC115EET1G
8N
100
100
SC-75/SOT-416
(Pb-Free)
DTC144WET1
8P
47
22
SC-75/SOT-416
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DTC114EET1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
DTC114EET1
(V
EB
= 6.0 V, I
C
= 0)
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
m
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
DTC114EET1
(V
CE
= 10 V, I
C
= 5.0 mA)
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
350
350
15
30
200
150
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) DTC123EET1
(I
C
= 10 mA, I
B
= 1 mA) DTC143TET1/DTC114TET1/
DTC143EET1/DTC143ZET1/DTC124XET1
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
W
)
DTC114EET1
DTC124EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
W
)
DTC144EET1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
W
)
DTC115EET1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
W
)
DTC144WET1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
W
)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
W
)
DTC143TET1
DTC143ZET1
DTC114TET1
V
OH
4.9
-
-
Vdc
3. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
DTC114EET1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Input Resistor
TC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
k
W
Resistor Ratio
DTC114EET1/DTC124EET1/DTC144EET1/
DTC115EET1
DTC114YET1
DTC143TET1/DTC114TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144WET1D
R
1
/R
2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
q
JA
= 600
C/W
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED
TRANSIENT

THERMAL
RESIST
ANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Normalized Thermal Response
DTC114EET1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS - DTC114EET1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
= -25
C
75
C
25
C
40
50
Figure 4. DC Current Gain
Figure 5. Output Capacitance
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
T
A
= -25
C
25
C
Figure 6. Output Current versus Input Voltage
75
C
25
C
T
A
= -25
C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 7. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
75
C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
DTC114EET1 Series
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS - DTC124EET1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
100
10
1
100
75
C
25
C
100
0
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
2
4
6
8
10
T
A
= -25
C
0
I
C
, COLLECTOR CURRENT (mA)
100
T
A
= -25
C
75
C
10
1
0.1
10
20
30
40
50
25
C
Figure 12. Input Voltage versus Output
Current
0.001
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS
)
T
A
= -25
C
75
C
25
C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20
50
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
DTC114EET1 Series
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS - DTC144EET1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 13. V
CE(sat)
versus I
C
0
2
4
6
8
10
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
C
75
C
25
C
Figure 14. DC Current Gain
Figure 15. Output Capacitance
100
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 16. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
100
10 1
100
25
C
75
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 17. Input Voltage versus Output Current
0
20
40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25
C
75
C
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS
)
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
= -25
C
T
A
= -25
C
DTC114EET1 Series
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS - DTC114YET1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 18. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 19. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 22. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25
C
25
C
T
A
= 75
C
V
CE
= 10
300
250
200
150
100
50
0
2
4
6
8
15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
25
C
I
C
/I
B
= 10
T
A
= -25
C
T
A
= 75
C
25
C
-25
C
V
O
= 0.2 V
T
A
= -25
C
75
C
V
O
= 5 V
25
C
75
C
DTC114EET1 Series
http://onsemi.com
9
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
V
CC
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
+12 V
Figure 24. Open Collector Inverter:
Inverts the Input Signal
Figure 25. Inexpensive, Unregulated Current Source
DTC114EET1 Series
http://onsemi.com
10
PACKAGE DIMENSIONS
SC-75/SOT-416
CASE 463-01
ISSUE C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1.10
0.043
0.53
0.020
0.50
0.020
mm
inches
SCALE 10:1
0.53
0.020
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.70
0.90
0.028
0.035
B
1.40
1.80
0.055
0.071
C
0.60
0.90
0.024
0.035
D
0.15
0.30
0.006
0.012
G
1.00 BSC
0.039 BSC
H
---
0.10
---
0.004
J
0.10
0.25
0.004
0.010
K
1.45
1.75
0.057
0.069
L
0.10
0.20
0.004
0.008
S
0.50 BSC
0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008)
B
-A-
-B-
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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